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1

波長范圍

420~1000nm

2

Resolution

1 nm

3

膜厚測定范圍

250 A- 20 um

4

膜厚測定精度

T=±5A, N=±0.02 based on SiO2 1100A standard wafer

5

膜厚測定重復(fù)性

SR Thickness repeatability: ≤ 1? (1?) (at 1100?, SiO2/Si)

6

測定光源

鹵素?zé)襞?/span>(含 Constant Current Power Supply)

7

透明基板里面反射補(bǔ)正機(jī)能

包括透明基板背后反射的修正(軟件)

8

測定SPOT徑(Spot Size )

50 um Diameter ( 20 X Objective ) , can be smaller with less signal / noise ratio

9

Tact time

2S（測試1S+分析1S）